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半导体物理电子学(第二版)
  • 书号:9787030209405
    作者:sheng s.li
  • 外文书名:Semiconductor Physical Electronics
  • 装帧:平装
    开本:B5
  • 页数:716
    字数:854000
    语种:英文
  • 出版社:科学出版社
    出版时间:2008-02
  • 所属分类:
  • 定价: ¥198.00元
    售价: ¥198.00元
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  • 购买数量: 件  可供
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  本书全面介绍了半导体物理的基本内容,这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强,合理地安排了物理原理,表征法以及半导体材料和器件的应用等内容,兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步,包括许多新出现并已进入市场的半导体器件。本书适合电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。
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目录

  • Preface
    1.Classification of Solids and Crystal Structure
    1.1 Introduction
    1.2 The Bravais Lattice
    1.3 The Crystal Structure
    1.4 Miller Indices and Crystal Planes
    1.5 The Reciprocal Lattice and Brillouin Zone
    1.6 Types of Crystal Bindings
    1.7 Defects in a Crystalline Solid
    Problems
    Bibliography
    2.Lattice Dynamics
    2.1 Introduction
    2.2 The One-Dimensional Linear Chain
    2.3 Dispersion Relation for a Three-Dimensional Lattice
    2.4 The Concept of Phonons
    2.5 The Density Of States and Lattice Spectrum
    2.6 Lattice Specific Heat
    Problems
    References
    Bibliography
    3.Semiconductor Statistics
    3.1 Introduction
    3.2 Maxwell-Boltzmann Statistics
    3.3 Fermi-Dirac Statistics
    3.4 Bose-Einstein Statistics
    3.5 Statistics for the ShalloW-Impurity States in a Semiconductor
    Problems
    Bibliography
    4.Energy Band Theory
    4.1 Introduction
    4.2 Basic Quantum Concepts and Wave Mechanics
    4.3 The Bloch-Floquet Theorem
    4.4 The Kronig-Penney Model
    4.5 The Nearly Free Electron Approximation
    4.6 The Tight-Binding Approximation
    4.7 Energy Band Structures for Some Semiconductors
    4.8 The Effective Mass Concept for Electrons and Holes
    4.9 Energy Band Structures and Density of States for Low-Dimensional Systems
    Problems
    References
    Bibliography
    5.Equilibrium Properties of Semiconductors
    5.1 Introduction
    5.2 Densities of Electrons and Holes in a Semiconductor
    5.3 Intrinsic Semiconductors
    5.4 Extrinsic Semiconductors
    5.5 Ionization Energies of Shallow-and Deep-Level Impurities
    5.6 Hall Effect,Electrical Conductivity,and Hall Mobility
    5.7 Heavy Doping Effects in a Degenerate Semiconductor
    Problems
    References
    Bibliography
    6.Excess Carrier Phenomenon in Semiconductors
    6.1 Introduction
    6.2 Nonradiative Recombination:The Shockley-Read-Hall Model
    6.3 Band-to-Band Radiative Recombination
    6.4 Band-to-Band Auger Recombination
    6.5 Basic Semiconductor Equations
    6.6 The Charge-Neutrality Equation
    6.7 The Haynes-Shockley Experiment
    6.8 The Photoconductivity Decay Experiment
    6.9 Surface States and Surface Recombination Velocity
    6.10 Deep-Level Transient Spectroscopy Technique
    6.11 Surface Photovoltage Technique
    Problems
    References
    Bibliography
    7. Transport Properties of Semiconductors
    7.1 Introduction
    7.2 Galvanomagnetic,Thermoelectric,and Thermomagnetic Effects
    7.3 Boltzmann Transport EquatiOn
    7.4 Derivation of Transport Coefficients for n-type Semiconductors
    7.5 Transport Coefficients for the Mixed Conduction Case
    7.6 Transport Coefficients for Some Semiconductors
    Problems
    References
    Bibliography
    8. Scattering Mechanisms and Carrier Mobilities in Semiconductors
    8.1 IntroductiOn
    8.2 Differential Scattering Cross-Section
    8.3 Ionized Impurity Scattering
    8.4 Neutral Impurity Scattering
    8.5 Acoustical Phonon Scattering
    8.6 Optical Phonon Scattering
    8.7 Scattering by Dislocations
    8.8 Electron and Hole Mobilities in Semiconductors
    8.9 Hot-Electron Effects in a Semiconductor
    Problems
    References
    Bibliography
    9.Optical Properties and Photoelectric Effects
    9.1 Introduction
    9.2 Optical Constants of a Solid
    9.3 Free-Carrier Absorption Process
    9.4 Fundamental Absorption Process
    9.5 The Photoconductivity Effect
    9.6 The Photovoltaic(Dember)Effect
    9.7 The Photomagnetoelectric Effect
    Problems
    References
    Bibliography
    1O.Metal-Semiconductor Contacts
    10.1 Introduction
    10.2 Metal Work Function and Schottky Effect
    10.3 Thermionic Emission Theory
    10.4 Ideal Schottky Contact
    10.5 Current Flow in a Schottky Diode
    10.6 Current-Voltage Characteristics of a Silicon and a GaAs Schottky Diode
    10.7 Determination of Schottky Barrier Height
    10.8 Enhancement of Effective Barrier Height
    10.9 Applications of Schottky Diodes
    10.10 Ohmic Contacts in Semiconductors
    Problems
    References
    Bibliography
    11.p-n Junction Diodes
    11.1 Introduction
    11.2 Equilibrium Properties of a p-n Junction Diode
    11.3 p-n Junction Diode Under Bias Conditions
    11.4 Minority Carrier Distribution and Current FlowW
    11.5 Diffusion Capacitance and Conductance
    11.6 Minority Carrier Storage and Transient Behavior
    11.7 Zener and Avalanche Breakdowns
    11.8 Tunnel Diodes
    11.9 p-n Heterojunction Diodes
    11.10 Junction Field-Effect Transistors
    Problems
    References
    Bibliography
    12.Solar Cells and Photodetectors
    12.1 Introduction
    12.2 Photovoltaic Devices(Solar Cells)
    12.3 Photodetectors
    Problems
    Refefences
    Bibliography
    13.Light-Emitting Devices
    13.1 Introduction
    13.2 Device Physics,Structures,and Characteristics of LEDs
    13.3 LED Materials and Technologies
    13.4 Principles of Semiconductor LDs
    13.5 Laser Diode(LD)Materials and Technologies
    Problems
    References
    Bibliography
    14.Bipolar Junction Transistors
    14.1 Introduction
    14.2 Basic Device Structures and Modes of Operation
    14.3 Current-Voltage Characteristics
    14.4 Current Gain,Base Transport Factor,and Emitter Injection Efficiency
    14.5 Modeling of a Bipolar Junction Transistor
    14.6 Switching and Frequency Response
    14.7 Advanced Bipolar Junction Transistors
    14.8 Thyristors
    14.9 Heterojunction Bipolar Transistors
    Problems
    References
    Bibliography
    15.Metal-Oxide-Semiconductor Field-Effect Transistors
    15.1 Introduction
    15.2 An Ideal Metal-Oxide-Semiconductor System
    15.3 Oxide Charges and Interface Traps
    15.4 MOS Field-Effect Transistors
    15.5 SOI MOSFETS
    15.6 Charge-Coupled Devices
    Problems
    References
    Bibliography
    16.High-Speed III-V Semiconductor Devices
    1 6.1 Introduction
    16.2 Metal-Semiconductor Field-Effect Transistors
    16.3 High Electron MobilitV Transistors
    16.4 Hot-Electron Transistors
    16.5 Resonant Tunneling Devices
    16.6 Transferred-Electron Devices
    Problems
    References
    Bibliography
    Solutions to Selected Problems
    Appendix
    Tndex
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