TABLE OF CONTENTS Foreword Hiroshi Iwai Introduction Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs 1 2/3-D process and device simulation. An effective tool for better understanding of internal behavior of semiconductor structures Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno 2 PSP: An advanced surface-potential-based MOSFET model R. van Langevelde, and G. Gildenblat 3 EKV3.0: An advanced charge based MOS transistor model.A design-oriented MOS transistor compact model for next generation CMOS Matthias Bucher, Antonios Bazigos, Fran(c)ois Krummenacher,Jean-Micehl Sallese, and Christian Enz 4 Modelling using high-frequency measurements Dominique Schreurs 5 Empirical FET models Iltcho Angelov 6 Modeling the SOI MOSFET nonlinearities.An empirical approach B. Parvais, A. Siligaris 7 Circuit level RF modeling and design Nobuyuki Itoh 8 On incorporating parasitic quantum effects in classicalcircuit simulations Frank Felgenhauer, Maik Begoin and Wolfgang Mathis 9 Compact modeling of the MOSFET in VHDL-AMS Christophe Lallement, Fran(c)ois Pe(＾)cheux, Alain Vachoux and Fabien Prégaldiny 10 Compact modeling in Verilog-A Boris Troyanovsky, Patrick O'Halloran and Marek Mierzwinski Index
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